Products
Your location:Home  /   Products  /   MOSEFET  /   MOSFET  /   Si2319CDS*

Si2319CDS*

Product Parameters

Parameter Value
Technology Trench
marking
Type P
ESD Yes/No N
VDS V -40
VGS V ±20
VGS(TH) V -1.2~-2.5
ID(A) -4.4
RDS(mΩ)@VGS 10V Typ 64
RDS(mΩ)@VGS 10V Max 77
RDS(mΩ)@VGS 4.5V Typ 90
RDS(mΩ)@VGS 4.5V Max 108
RDS(mΩ)@VGS 2.5V Typ -
RDS(mΩ)@VGS 2.5V Max -

Application for Samples

Customer Information

Organization Information:
Name/Position:
Telephone/Mobile:
Email:
Address:
Application Field:
网站地图