Products
Your location:Home  /   Products  /   MOSEFET  /   MOSFET  /   Si2316BDS*

Si2316BDS*

Product Parameters

Parameter Value
Technology Trench
marking
Type N
ESD Yes/No N
VDS V 30
VGS V ±20
VGS(TH) V 1~3
ID(A) 4.5
RDS(mΩ)@VGS 10V Typ -
RDS(mΩ)@VGS 10V Max -
RDS(mΩ)@VGS 4.5V Typ 41
RDS(mΩ)@VGS 4.5V Max 50
RDS(mΩ)@VGS 2.5V Typ 64
RDS(mΩ)@VGS 2.5V Max 80

Application for Samples

Customer Information

Organization Information:
Name/Position:
Telephone/Mobile:
Email:
Address:
Application Field:
网站地图