Products
Your location:Home  /   Products  /   MOSEFET  /   MOSFET  /   MUPD50A

MUPD50A

Product Parameters

Parameter Value
Technology Trench
marking MUPD50A
Type N+P
ESD Yes/No N
VDS V 30(N),-30(P)
VGS V ±20
VGS(TH) V 1.5~2.5(N),-1.5~-2.5(P)
ID(A) 50(N),-50(P)
RDS(mΩ)@VGS 10V Typ 6.5(N),8.8(P)
RDS(mΩ)@VGS 10V Max 10(N),13(P)
RDS(mΩ)@VGS 4.5V Typ 9.2(N),12(P)
RDS(mΩ)@VGS 4.5V Max 15(N),20(P)
RDS(mΩ)@VGS 2.5V Typ
RDS(mΩ)@VGS 2.5V Max

Application for Samples

Customer Information

Organization Information:
Name/Position:
Telephone/Mobile:
Email:
Address:
Application Field:
网站地图