Products
Your location:Home  /   Products  /   MOSEFET  /   MOSFET  /   MU0E180AG

MU0E180AG

Product Parameters

Parameter Value
Technology Trench
marking MU0E180AG
Type N
ESD Yes/No N
VDS V 40
VGS V ±20
VGS(TH) V 1.0~2.5
ID(A) 180
RDS(mΩ)@VGS 10V Typ 1.45
RDS(mΩ)@VGS 10V Max 1.9
RDS(mΩ)@VGS 4.5V Typ 1.9
RDS(mΩ)@VGS 4.5V Max 2.5
RDS(mΩ)@VGS 2.5V Typ -
RDS(mΩ)@VGS 2.5V Max -

Application for Samples

Customer Information

Organization Information:
Name/Position:
Telephone/Mobile:
Email:
Address:
Application Field:
网站地图